Micron uses what the company calls CMOS Under Array or CuA as a platform to build a pair of TLC stacks on top of it, totaling 232 layers. Each stacked NAND Flash chip is said to have a capacity of 1 terabit or 128 GB, so we’re not seeing any capacity increase over the competition at the moment, but Micron is promising node-by-node throughput increases so we may eventually see better performance. compared to competitors.
The new NAND flash is supposed to be optimized for SSDs and other “managed” NANDs like eMMC and UFS.
Micron also unveiled an updated NAND Flash roadmap in which the company plans to release over 200 more multi-layer products before moving to 300- and 400-layer NAND stacks in the future.
300-layer bags are already in structural development, while 400-layer products are still in the very early stages of research. The new 232-layer products will reportedly go into mass production by the end of this year, so we shouldn’t expect products based on Micron’s 232-layer NAND memory until 2023.