Samsung Electronics has introduced a new graphics memory standard – GDDR6W. Against the background of conventional GDDR6 chips, the new chips stand out with twice the capacity and performance. One of the areas of application of new products will be next-generation 3D accelerators.
In GDDR6W memory, the South Korean giant applied FOWLP (Fan-Out Wafer-Level Packaging) technology, which made it possible to combine twice as many DRAM crystals in one chip. At the same time, the dimensions of the chips remained comparable to GDDR6 counterparts, so Samsung customers can easily integrate them into their products. For new microcircuits, a bandwidth of 22 Gb / s per contact is declared. By the way, in the assortment of Samsung there are GDDR6 chips with speeds up to 24 Gb / s.
As an example, Samsung compares the performance of the new chips with HBM (High Bandwidth Memory) multi-layer memory. Eight GDDR6W chips can provide 1.4 TB/s of bandwidth, which is only slightly behind the four HBM2E memory stacks (1.6 TB/s). The capacity of such a video buffer will be 32 GB.