Micron has unveiled its ninth-generation 276-layer 3D TLC NAND flash memory chips (Micron G9 NAND), as well as a series of Micron 2650 PCIe 4.0 solid-state drives based on them. The latter will be released in M.2 2230, 2242, and 2280 formats, offering capacities of 256 and 512 GB, as well as 1 TB.
Image source: Micron
Micron said customer demand was the primary driver for developing the new flash memory chips. The goal was to create a 1-Tb die that would fit into an 11.5 x 13.5 mm BGA package, deliver 3.6 Gbps of throughput, and have a 44% higher bit density than its previous generations of solutions.
Image source: Blocks and Files
Micron says the new drives, based on its 276-layer flash memory chips with 3.6 Gbps per channel, deliver best-in-class performance. Micron G9 NAND has up to 99% higher write throughput and 88% higher read throughput per die than currently available competing NAND solutions from SK hynix, Solidigm, Kioxia, Western Digital, and Samsung. Additionally, Micron G9 NAND is up to 73% denser and 28% smaller than competing solutions.
For the 256GB Micron 2650, the company claims sequential read speeds of 5,000MB/s and sequential write speeds of 2,500MB/s, as well as random read/write performance of 370,000 and 500 IOPS. The 512GB model claims sequential read/write speeds of 7,000 and 4,800MB/s, and random read/write performance of 740,000 and 1 million IOPS. The 1TB version of the SSD claims sequential read/write speeds of 7,000 and 6,000MB/s, respectively, as well as random read/write performance of 1 million IOPS.
Micron says its new products deliver up to 38 percent better performance in the PCMark 10 benchmark, 36 percent higher throughput on average, and 40 percent faster data access.
The company notes that the new 276-layer 3D TLC NAND flash memory chips are already available in Micron 2650 drives for OEM partners, and are also being tested for consumer SSDs and its own Crucial brand products.
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