And it does not intend to lag behind its main competitors.
South Korean edition ET News claims that SK hynix has begun developing 400-layer 3D NAND memory chips that can be produced by bonding two silicon wafers using a new packaging technology. It will replace the PUC arrangement that the company currently uses to produce 3D NAND chips.
Image source: SK hynix
The Korean company plans to prepare the entire infrastructure for the production of 400-layer 3D NAND memory in cooperation with partners by the end of next year, and to begin mass production of such memory in 2026. Competing Samsung is also going to establish the production of 400-layer 3D NAND memory, and the Japanese Kioxia even claims that it will be able to increase the number of layers of such memory to 1000 pieces by 2027. However, this may not be entirely economically feasible, as the company admits. Samsung plans to conquer this milestone only by the end of the decade.
