High demand for computing accelerators for artificial intelligence systems also affects the income of manufacturers of multilayer HBM (High Bandwidth Memory) memory. Now chipmakers are investing a lot of resources in improving this type of memory, announcing increasingly capacious and faster chips. In particular, Samsung Electronics has completed the development of a 12-layer HBM3E stack with a capacity of 36 GB and has already begun delivering samples to its partners.
For the new Samsung HBM3E chips, a throughput of 1.28 TB/s is declared. This is one and a half times more than current 8-layer stacks with a capacity of 24 GB. At the same time, the South Korean giant managed to keep the height of the new HBM3E chips at the same level thanks to a number of proprietary technologies, such as the method using thermal compression dielectric film (TC-NCF).
The start of mass production of 36 GB Samsung HBM3E chips is planned for the first half of this year.
Source:
TechPowerUp