Changxin Memory wants to be like Samsung and Micron – the Chinese company undertakes the development of NAND flash memory

So far, Chinese companies Changxin Memory and Yangtze Memory have coexisted well in the Chinese memory chip market. The first offers DRAM RAM and the second exclusively offers NAND. Their interests only overlap in the field of HBM, which they both dream of mastering, but now there is news that Changxin Memory intends to invade Yangtze Memory’s area – the solid-state memory market – and produce both types of computer memory like Samsung and Micron.

Image source: Changxin Storage

mechanism Reuters Changxin Storage announced today its intention to establish a research center in Beijing that will enable it to master the production of flash memory. In addition to intensifying competition in China’s domestic memory market, the move is also aimed at improving Changxin Storage’s chances of making money in the global NAND market, which is also facing shortages. Kwak Noh-jung, head of South Korea’s SK Hynix, said in July that next year will be the most difficult year for memory shortages in the industry. TrendForce experts said that in the NAND field, the memory supply situation will not start to improve until the second half of 2027. The situation is worsened as memory manufacturers want to focus more on the production of DRAM, especially HBM. As a result, the industry is devoting fewer resources to NAND production, creating shortages and driving up prices.

It is rumored that Changxin Storage will install a NAND pilot production line at its new factory in Beijing, and will also set up a research center in the Chinese capital to develop related technologies. However, at the same time other scientific questions unique to CXMT activities will also be addressed here. The company is said to have even discussed its NAND plans with a startup that might need it, as well as some other customers. It is unclear whether Changxin Storage intends to move from NAND manufacturing experiments to full production and when the experimental lines will be ready.

At the same time, it cannot be said that Yangtze River Storage has not eroded the market share occupied by Changxin Storage. In April, Reuters reported that Yangtze Memory was interested in producing a low-power version of DRAM (LPDDR), and the company was said to have even sent samples of profile chips to customers. Both manufacturers are also trying to introduce HBM, a type of memory popular in AI infrastructure computing accelerators.