South Korean corporation Samsung Electronics is preparing for a test launch of its new semiconductor plant in the American city of Taylor (Texas) in the second half of December. Mass production of advanced microcircuits at this site is scheduled for 2027.
Image Source: The Hindu Business Line
The manufacturer itself has not yet announced the exact date for the start of testing the production line. The Korea Herald, citing industry sources, reports that the company’s specialists are already completing the installation of equipment and conducting initial checks of the systems.
In parallel, the American division of Samsung Austin Semiconductor is looking for specialized engineers, as well as technical instructors to train staff. The main goal of the test stage is to debug the technological chains and bring the percentage of usable crystals to an acceptable level, which is critical for mastering the 2nm process technology.
Construction of the plant in Taylor began in 2022: the manufacturer initially expected to put the complex into operation in the second half of 2024, but in the end the schedule shifted by two years. One of the key tasks of the factory should be the production of new generation AI6 processors for Tesla under a contract worth $16.5 billion – their production is expected in the second half of 2027.
By the end of this month, Samsung should begin construction of a second plant in Texas, which is scheduled to launch in 2030. According to sources, the new plant plans to produce basic logic crystals for high-speed HBM memory on orders from AMD and Nvidia, but these agreements have not been officially confirmed.
The launch of a factory in the United States should help Samsung strengthen its position in the field of contract manufacturing of microelectronics. The company now ranks second in the world, far behind Taiwan’s TSMC. Thus, according to TrendForce analysts, in the second quarter of 2026, Samsung’s share in the global market for contract production of chips was 5.9% versus 72.5% for the industry leader.
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