Chinese memory chip maker Changxin Memory has begun small-volume testing of its advanced high-speed memory HBM3E. Several Chinese companies, including T-Head (a subsidiary of Alibaba Group) and Cambricon Technologies, are already testing this memory with their processors. The company plans to expand production in 2027.
Image source: Changxin Storage
Chinese memory manufacturers are currently two generations behind Korean companies, which are gradually shifting to the production of HBM4E memory. However, this is an important milestone for Changxin Memory, which plans to reach a monthly production capacity of about 350,000 DRAM wafers by the end of this year and continue to increase production capacity in subsequent years.
According to reports, HBM3E has begun small-scale production, indicating that trial production has begun. Analysts believe the company will quickly move from test batches to mass production. Changxin Storage significantly outperformed its competitors in the speed of clean room construction – it took the company just 12 months to put such a facility into use, whereas it normally takes up to two years.
The specific technical specifications of Changxin Storage’s HBM3E memory have not been disclosed, but the standard JEDEC specification requires 1024-bit width and speeds of 9.2 Gbps to 12.4 Gbps per pin, with most standard configurations targeting 9.6 Gbps per pin. Total throughput is 1.2 TB/s, with capacities ranging from 24 GB using 8-tier stacking to 36 GB using 12-tier stacking.
Changxin Storage has multiple facilities, including two 12-inch wafer fabs, one in Hefei and one in Beijing, each with a wafer production capacity of approximately 100,000 wafers per month. Currently, production capacity is approximately 200,000 wafers per month, and this number is expected to triple to 600,000 wafers per month once the Shanghai and Hefei factories are completed and fully operational.
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